Semiconductor device

ABSTRACT

A semiconductor device including a substrate; a first active pattern on the substrate and extending in a first direction, an upper portion of the first active pattern including a first channel pattern; first source/drain patterns in recesses in an upper portion of the first channel pattern; and a gate electrode on the first active pattern and extending in a second direction crossing the first direction, the gate electrode being on a top surface and on a side surface of the at least one first channel pattern, wherein each of the first source/drain patterns includes a first, second, and third semiconductor layer, which are sequentially provided in the recesses, each of the first channel pattern and the third semiconductor layers includes silicon-germanium (SiGe), and the first semiconductor layer has a germanium concentration higher than those of the first channel pattern and the second semiconductor layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation application based on pending application No.17/509,239, filed Oct. 25, 2021, which in turn is a continuation ofapplication No. 16/896,423, filed Jun. 9, 2020, now Patent No.11,171,135 B2, issued Nov. 9, 2021, the entire contents of both beinghereby incorporated by reference.

Korean Patent Application No. 10-2019-0130171, filed on Oct. 18, 2019,in the Korean Intellectual Property Office, and entitled: “SemiconductorDevice,” is incorporated by reference herein in its entirety.

BACKGROUND 1. Field

Embodiments relate to a semiconductor device.

2. Description of the Related Art

Due to their small-size, multifunctional, and/or low-costcharacteristics, semiconductor devices are being esteemed as importantelements in the electronic industry. The semiconductor devices mayinclude, e.g., a semiconductor memory device for storing data, asemiconductor logic device for processing data, and a hybridsemiconductor device including both of memory and logic elements. As theelectronic industry advances, there is an increasing demand forsemiconductor devices with improved characteristics.

SUMMARY

The embodiments may be realized by providing a semiconductor deviceincluding a substrate; a first active pattern on the substrate andextending in a first direction, an upper portion of the first activepattern including at least one first channel pattern; first source/drainpatterns in recesses in an upper portion of the at least one firstchannel pattern; and a gate electrode on the first active pattern andextending in a second direction crossing the first direction, the gateelectrode being on a top surface and on at least one side surface of theat least one first channel pattern, wherein each of the firstsource/drain patterns includes a first semiconductor layer, a secondsemiconductor layer, and a third semiconductor layer, which aresequentially provided in the recesses, each of the at least one firstchannel pattern, the first semiconductor layer, the second semiconductorlayer, and the third semiconductor layer includes silicon-germanium(SiGe), and the first semiconductor layer has a germanium concentrationhigher than those of the at least one first channel pattern and thesecond semiconductor layer.

The embodiments may be realized by providing a semiconductor deviceincluding a substrate; a first active pattern on the substrate andextending in a first direction; first source/drain patterns in recessesin an upper portion of the first active pattern; and a gate electrode onthe first active pattern and extending in a second direction crossingthe first direction, the gate electrode being on a top surface and atleast one side surface of the first active pattern, wherein each of thefirst source/drain patterns includes a first semiconductor layer and asecond semiconductor layer, which are sequentially provided in therecesses, the first semiconductor layer has a germanium concentrationhigher than that of the second semiconductor layer, the first activepattern includes a first channel pattern at an upper portion thereof,the first channel pattern includes a pair of first surfaces that facethe first source/drain patterns, and a pair of second surfaces thatconnect the pair of first surfaces to each other and are overlapped withthe gate electrode, and the first semiconductor layer includes firstportions on the first surfaces and second portions on the secondsurfaces.

The embodiments may be realized by providing a semiconductor deviceincluding a substrate; a first active pattern on the substrate andextending in a first direction, an upper portion of the first activepattern including a first channel pattern; first source/drain patternsin recesses in an upper portion of the first channel pattern; a gateelectrode on the first active pattern and extending in a seconddirection crossing the first direction, the gate electrode being on atop surface and at least one side surface of the first channel pattern,an active contact connected to the first source/drain pattern; and aninterface layer between the active contact and the first source/drainpattern, wherein each of the first source/drain patterns includes afirst semiconductor layer, a second semiconductor layer, and a thirdsemiconductor layer, which are sequentially provided on the recesses,each of the first channel pattern, the first semiconductor layer, thesecond semiconductor layer, and the third semiconductor layer includessilicon-germanium (SiGe), a germanium concentration of the thirdsemiconductor layer is higher than that of the second semiconductorlayer, a germanium concentration of the first semiconductor layer ishigher than those of the first active pattern and the secondsemiconductor layer, the first channel pattern includes a pair of firstsurfaces, which face the first source/drain patterns, and a pair ofsecond surfaces, which connect the pair of first surfaces to each otherand are overlapped with the gate electrode, and the first semiconductorlayer includes first portions on the first surfaces and second portionson the second surfaces.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will be apparent to those of skill in the art by describing indetail exemplary embodiments with reference to the attached drawings inwhich:

FIG. 1 illustrates a plan view of a semiconductor device according to anembodiment.

FIGS. 2A to 2D illustrate sectional views taken along lines A-A′, B-B′,C-C′, and D-D′, respectively, of FIG. 1 .

FIG. 3 illustrates an enlarged sectional view of a region ‘M’ of FIG.2A.

FIG. 4 illustrates an enlarged plan view of a region ‘N’ of FIG. 1 .

FIGS. 5 and 6 illustrate enlarged plan views of first and secondsemiconductor layers, respectively, which are provided in the region‘N’.

FIG. 7 illustrates a perspective view of a first semiconductor layer.

FIG. 8 illustrates an enlarged plan view of the region ‘N’ of FIG. 1 ,according to another embodiment.

FIG. 9 illustrates an enlarged plan view of a first semiconductor layerin the region ‘N’.

FIGS. 10, 13, 15, 17, 19, 21, and 23 illustrate plan views of stages ina method of fabricating a semiconductor device, according to anembodiment.

FIGS. 11, 12, 14A, 16A, 18A, 20A, 22A, and 24A illustrate sectionalviews taken along lines A-A′ of FIGS. 10, 13, 15, 17, 19, 21, and 23 ,respectively.

FIGS. 14B, 16B, 18B, 20B, 22B, and 24B illustrate sectional views takenalong lines B-B′ of FIGS. 13, 15, 17, 19, 21, and 23 , respectively.

FIGS. 14C, 16C, and 24C illustrate sectional views taken along linesC-C′ of FIGS. 13, 15, and 23 , respectively.

FIG. 24D illustrates a sectional view taken along a line D-D′ of FIG. 23.

FIGS. 25A to 25D illustrate sectional views, which are taken along linesA-A′,B-B′, C-C′, and D-D′ of FIG. 1 to illustrate a semiconductor deviceaccording to an embodiment.

DETAILED DESCRIPTION

FIG. 1 is a plan view of a semiconductor device according to anembodiment. FIGS. 2A to 2D are sectional views taken along lines A-A′,B-B′, C-C′, and D-D′, respectively, of FIG. 1 . FIG. 3 is an enlargedsectional view of a region ‘M’ of FIG. 2A. FIG. 4 is an enlarged planview of a region ‘N’ of FIG. 1 . FIGS. 5 and 6 are enlarged plan viewsillustrating first and second semiconductor layers, respectively, whichare provided in the region ‘N’. FIG. 7 is a perspective view of a firstsemiconductor layer.

Referring to FIGS. 1, 2A to 2D, and 3 , a substrate 100 including afirst active region PR and a second active region NR may be provided.The substrate 100 may be a semiconductor substrate made of, e.g.,silicon, germanium, silicon-germanium, or a compound semiconductormaterial. In an implementation, the substrate 100 may be a siliconwafer.

In an implementation, the first and second active regions PR and NR maybe logic cell regions, on which logic transistors will be formed. In animplementation, the logic transistors may constitute a logic circuit ofthe semiconductor device. In an implementation, the logic transistorsconstituting the logic circuit may be on the logic cell region of thesubstrate 100. The first and second active regions PR and NR may includesome of the logic transistors. The first active region PR may be aPMOSFET region, and the second active region NR may be an NMOSFETregion.

The first and second active regions PR and NR may be defined (e.g.,separated) by a second trench TR2, which is formed in an upper portionof the substrate 100. The second trench TR2 may be between the first andsecond active regions PR and NR. The first and second active regions PRand NR may be spaced apart from each other in a first direction D1 withthe second trench TR2 therebetween. Each of the first and second activeregions PR and NR may extend (e.g., lengthwise) in a second direction D2crossing the first direction D1.

First active patterns AP1 and second active patterns AP2 may be on thefirst active region PR and the second active region NR, respectively.The first and second active patterns AP1 and AP2 may extend (e.g.,lengthwise) in the second direction D2 and may be parallel to eachother. The first and second active patterns AP1 and AP2 may includevertically-protruding portions of the substrate 100. Each of the upperportions of the first and second active patterns AP1 and AP2 may beshaped like a fin. A first trench TR1 may be defined between adjacentones of the first active patterns AP1 and between adjacent ones of thesecond active patterns AP2. The first trench TR1 may be shallower thanthe second trench TR2 (e.g., with respect to an upper surface of thesubstrate 100 in a vertical or third direction D3).

Each of the first active patterns AP1 may include an upper portion, aportion of which is a first channel pattern CH1. The first channelpatterns CH1 may be formed of or include a semiconductor materialdifferent from the substrate 100. In an implementation, in the casewhere the substrate 100 is a silicon substrate, the first channelpatterns CH1 may be formed of or include silicon-germanium. The firstchannel patterns CH1 may include silicon-germanium, and mobility ofelectric charges in the first channel patterns CH1 may be increased.

Lower portions of the first active patterns AP1, which are located belowthe first channel patterns CH1 (e.g., in the third direction D3), may beprotruding patterns, which vertically extend from the substrate 100. Inan implementation, second channel patterns CH2, which are the upperportions of the second active patterns AP2, may be portions of thesubstrate 100 and may be formed of or include silicon.

A device isolation layer ST may fill the first and second trenches TR1and TR2. The device isolation layer ST may be formed of or includesilicon oxide. The upper portions of the first and second activepatterns AP1 and AP2 may be protruding patterns, which are verticallyextended above the device isolation layer ST (e.g., in the thirddirection, see FIG. 2D). The device isolation layer ST may not cover theupper portions of the first and second active patterns AP1 and AP2. Thedevice isolation layer ST may cover side surfaces of lower portions ofthe first and second active patterns AP1 and AP2. In an implementation,the lower portions of the first channel patterns CH1 may be covered withthe device isolation layer ST.

First source/drain patterns SD1 may be provided in or on the upperportions of the first active patterns AP1. The first source/drainpatterns SD1 may be impurity regions of a first conductivity type (e.g.,p-type). The first source/drain patterns SD1 may be provided in or onthe upper portion of the first channel pattern CH1. Second source/drainpatterns SD2 may be provided in or on the upper portions of the secondactive patterns AP2. The second source/drain patterns SD2 may beimpurity regions of a second conductivity type (e.g., n-type). Thesecond channel pattern CH2 may be between each pair of the secondsource/drain patterns SD2. The second channel patterns CH2 maycorrespond to the upper portions of the second active patterns AP2.

The first and second source/drain patterns SD1 and SD2 may be epitaxialpatterns, which may be formed by a selective epitaxial growth (SEG)process. In an implementation, the first and second source/drainpatterns SD1 and SD2 may have top surfaces that are coplanar with topsurfaces of the first and second channel patterns CH1 and CH2. In animplementation, the top surfaces of the first and second source/drainpatterns SD1 and SD2 may be higher than (e.g., in the third directionD3) the top surfaces of the first and second channel patterns CH1 andCH2.

The first source/drain patterns SD1 may include a semiconductor element(e.g., Ge), whose lattice constant is larger than a lattice constant ofa semiconductor element (e.g., Si) in the substrate 100. In animplementation, the first source/drain patterns SD1 may be formed of orinclude silicon-germanium. The first source/drain patterns SD1 may exerta compressive stress on the first channel patterns CH1. In animplementation, the second source/drain patterns SD2 may, e.g., includethe same semiconductor element (e.g., Si) as the substrate 100.

Gate electrodes GE may cross the first and second active patterns AP1and AP2 and extend (e.g., lengthwise) in the first direction D1. Thegate electrodes GE may be spaced apart from each other in the seconddirection D2. The gate electrodes GE may be overlapped with the firstand second channel patterns CH1 and CH2, when viewed in a plan view.Each of the gate electrodes GE may face a top surface and opposite sidesurfaces of respective ones of the first and second channel patterns CH1and CH2.

Referring back to FIG. 2D, the gate electrode GE may be on a first topsurface TS1 and at least one side surface of the first channel patternCH1. The gate electrode GE may be on a second top surface TS2 and atleast one side surface of the second channel pattern CH2. A transistoraccording to the present embodiment may be a three-dimensionalfield-effect transistor (e.g., FinFET), in which the gate electrode GEthree-dimensionally surrounds the channel patterns CH1 and CH2.

Referring back to FIGS. 1, 2A to 2D, and 3 , a pair of gate spacers GSmay be on both side surfaces of each of the gate electrodes GE. The gatespacers GS may extend along the gate electrodes GE and in the firstdirection D1. Top surfaces of the gate spacers GS may be higher than topsurfaces of the gate electrodes GE (e.g., in the third direction D3).The top surfaces of the gate spacers GS may be coplanar with a topsurface of a first interlayered insulating layer 110, which will bedescribed below. The gate spacers GS may be formed of or include atleast one of SiCN, SiCON, or SiN. In an implementation, the gate spacersGS may be a multi-layered structure, which includes at least twodifferent materials selected from SiCN, SiCON, and SiN. As used herein,the term “or” is not an exclusive term, e.g., “A or B” would include A,B, or A and B.

A gate capping pattern GP may be on each of the gate electrodes GE. Thegate capping pattern GP may extend along the gate electrode GE and inthe first direction D1. The gate capping pattern GP may be formed of orinclude a material that has etch selectivity with respect to first andsecond interlayered insulating layers 110 and 120 to be described below.In an implementation, the gate capping patterns GP may be formed of orinclude at least one of SiON, SiCN, SiCON, or SiN.

A gate dielectric pattern GI may be between the gate electrode GE andthe first active pattern AP1 and between the gate electrode GE and thesecond active pattern AP2. The gate dielectric pattern GI may extendalong a bottom surface of the gate electrode GE thereon. In animplementation, the gate dielectric pattern GI may cover the first topsurface TS1 and the side surface of the first channel pattern CH1. Thegate dielectric pattern GI may cover the second top surface TS2 and theside surface of the second channel pattern CH2. The gate dielectricpattern GI may cover a top surface of the device isolation layer STbelow the gate electrode GE (e.g., see FIG. 2D).

In an implementation, the gate dielectric pattern GI may be formed of orinclude a high-k dielectric material, whose dielectric constant ishigher than that of a silicon oxide layer. In an implementation, thehigh-k dielectric material may include, e.g., hafnium oxide, hafniumsilicon oxide, hafnium zirconium oxide, hafnium tantalum oxide,lanthanum oxide, zirconium oxide, zirconium silicon oxide, tantalumoxide, titanium oxide, barium strontium titanium oxide, barium titaniumoxide, strontium titanium oxide, lithium oxide, aluminum oxide, leadscandium tantalum oxide, or lead zinc niobate.

In an implementation, the gate dielectric pattern GI may be formed of orinclude a ferroelectric material. The gate dielectric pattern GIincluding the ferroelectric material may serve as a negative capacitor.The ferroelectric material of the gate dielectric pattern GI may includehafnium oxide, which contains (or is doped) with zirconium (Zr), silicon(Si), aluminum (Al), or lanthanum (La).

The gate electrode GE may include a first metal pattern and a secondmetal pattern on the first metal pattern. The first metal pattern may beon the gate dielectric pattern GI and may be adjacent to the first andsecond channel patterns CH1 and CH2. The first metal pattern may includea work function metal, which may help adjust a threshold voltage of thetransistor. By adjusting a thickness and composition of the first metalpattern, it is possible to realize a transistor having a desiredthreshold voltage.

The first metal pattern may include a metal nitride layer. In animplementation, the first metal pattern may include nitrogen (N) and atleast one metal, e.g., titanium (Ti), tantalum (Ta), aluminum (Al),tungsten (W), or molybdenum (Mo). The first metal pattern may furtherinclude carbon (C). The first metal pattern may include a plurality ofwork function metal layers, which are stacked.

The second metal pattern may include a metallic material, whoseresistance is lower than the first metal pattern. In an implementation,the second metal pattern may include, e.g., tungsten (W), aluminum (Al),titanium (Ti), or tantalum (Ta).

A first semiconductor layer SL1 may be between the gate dielectricpattern GI and the first channel patterns CH1. In an implementation, asecond portion P2 of the first semiconductor layer SL1 may be betweenthe gate dielectric pattern GI and the first channel patterns CH1. Thesecond portion P2 of the first semiconductor layer SL1 may cover thefirst top surface TS1 and the side surface of the first channel patternsCH1, as shown in FIG. 2D. The second portion P2 of the firstsemiconductor layer SL1 may be connected to a first portion P1 and athird portion P3, which will be described below, as shown in FIG. 7 .

The first interlayered insulating layer 110 may be on the substrate 100.The first interlayered insulating layer 110 may cover the gate spacersGS and the first and second source/drain patterns SD1 and SD2. A topsurface of the first interlayered insulating layer 110 may besubstantially coplanar with the top surfaces of the gate cappingpatterns GP and the top surfaces of the gate spacers GS. The secondinterlayered insulating layer 120 may be on the first interlayeredinsulating layer 110 to cover the gate capping patterns GP. A thirdinterlayered insulating layer 130 may be on the second interlayeredinsulating layer 120. In an implementation, the first to thirdinterlayered insulating layers 110, 120, and 130 may be formed of orinclude silicon oxide.

Active contacts AC may penetrate the first and second interlayeredinsulating layers 110 and 120 and may be electrically connected to thefirst and second source/drain patterns SD1 and SD2, respectively. Eachof the active contacts AC may be between a pair of the gate electrodesGE.

The active contact AC may be a self-aligned contact. In animplementation, the active contact AC may be formed by a self-alignmentprocess using the gate capping pattern GP and the gate spacer GS. In animplementation, the active contact AC may cover at least a portion of aside surface of the gate spacer GS. In an implementation, the activecontact AC may cover a portion of the top surface of the gate cappingpattern GP.

An interface pattern SC may be between the active contact AC and thefirst source/drain pattern SD1 and between the active contact AC and thesecond source/drain pattern SD2. The active contact AC may beelectrically connected to the first or second source/drain pattern SD1or SD2 through the interface pattern SC. The interface pattern SC may beformed of or include at least one of metal-silicide materials (e.g.,titanium-silicide, tantalum-silicide, tungsten-silicide,nickel-silicide, or cobalt-silicide).

At least one gate contact GC may be on (e.g., over or aligned with) thedevice isolation layer ST filling the second trench TR2. The gatecontact GC may penetrate the second interlayered insulating layer 120and the gate capping pattern GP and may be electrically connected to thegate electrode GE.

Each of the active and gate contacts AC and GC may include a conductivepattern FM and a barrier pattern BM enclosing the conductive pattern FM.In an implementation, the conductive pattern FM may be formed of orinclude a metal, e.g., aluminum, copper, tungsten, molybdenum, orcobalt. The barrier pattern BM may cover side and bottom surfaces of theconductive pattern FM. The barrier pattern BM may include a metal layeror a metal nitride layer. The metal layer may be formed of or includetitanium, tantalum, tungsten, nickel, cobalt, or platinum. The metalnitride layer may be formed of or include titanium nitride (TiN),tantalum nitride (TaN), tungsten nitride (WN), nickel nitride (NiN),cobalt nitride (CoN), or platinum nitride (PtN).

A first interconnection layer may be in the third interlayeredinsulating layer 130. The first interconnection layer may include aplurality of interconnection lines IL and a plurality of vias VI belowthe interconnection lines IL. The interconnection lines IL may extend(e.g., lengthwise) in the second direction D2 and may be parallel toeach other. The interconnection lines IL may be arranged (e.g., spacedapart) in the first direction D1.

The via VI may be between a first interconnection line, which is one ofthe interconnection lines IL, and the active contact AC. The firstinterconnection line may be electrically connected to the active contactAC through the via VI. The via VI may also be between a secondinterconnection line, which is another of the interconnection lines IL,and the gate contact GC. The second interconnection line may beelectrically connected to the gate contact GC through the via VI.

In an implementation, a plurality of interconnection layers may beadditionally stacked on the first interconnection layer. Logic cellsconstituting the logic circuit may be connected to each other throughthe first interconnection layer and the additionally-stackedinterconnection layers.

Hereinafter, the first source/drain pattern SD1 will be described inmore detail with reference to FIGS. 2A, 2C, and 3 to 7 . A recess RS maybe formed in the upper portion of the first active pattern AP1 (e.g.,the first channel pattern CH1). In an implementation, a plurality ofrecesses RS may be formed in the upper portion of each of the firstchannel patterns CH1. The first source/drain pattern SD1 may be providedin the recess RS.

The first source/drain pattern SD1 may include a buffer layer BL, a mainlayer ML on the buffer layer BL, and a capping layer CL on the mainlayer ML. In an implementation, the buffer layer BL may include firstand second semiconductor layers SL1 and SL2. The main layer ML mayinclude third and fourth semiconductor layers SL3 and SL4. The cappinglayer CL may include a fifth semiconductor layer SL5. In animplementation, the fourth semiconductor layer SL4 may be omitted, andthe main layer ML may be composed of a single semiconductor layer. Themain layer ML may be on the buffer layer BL and may cover an inner sidesurface of the buffer layer BL. The main layer ML may fill (e.g.,remaining portions of) the recess RS. The capping layer CL may cover thetop surface of the main layer ML. The capping layer CL may beconformally formed on an exposed surface of the main layer ML. Thecapping layer CL may help protect the main layer ML.

As shown in FIG. 3 , the recess RS may include a pair of inner sidesurfaces RSw and a bottom surface RSb between the pair of the inner sidesurfaces RSw. The buffer layer BL may cover the inner side surface RSwand the bottom surface RSb of the recess RS. When viewed in a sectionalview taken in the second direction D2, the buffer layer BL may have a‘U′-shape section.

Referring to FIGS. 2C, 2D, and 3 to 6 , the first channel patterns CH1may include a pair of first side surfaces SW1 (e.g., FIG. 3 ), whichface the first source/drain pattern SD1, and second side surfaces SW2(e.g., See FIG. 2D), which are overlapped with the gate electrode GE.The first portion P1 of the first semiconductor layer SL1 may cover thefirst side surfaces SW1, and the second portion P2 of the firstsemiconductor layer SL1 may cover the second side surfaces SW2. In animplementation, when viewed in a plan view, four surfaces of the firstchannel pattern CH1 may be covered with the first semiconductor layerSL1.

The first portion P1 of the first semiconductor layer SL1 may be a partof the first source/drain pattern SD1 and may be in the recess RS. Thefirst portion P1 of the first semiconductor layer SL1 may includeopposite side portions SP1 and a bottom portion BP1, as shown in FIG. 7. The second portion P2 of the first semiconductor layer SL1 may cover afirst top surface T1 and the second side surfaces SW2 of the firstchannel patterns CH1. The second portion P2 of the first semiconductorlayer SL1 may include opposite side portions SP2 and a top portion TP.The side portions SP1 of the first portion P1 may be connected tosurfaces of the second portion P2, which is exposed in the seconddirection D2.

The first semiconductor layer SL1 may include the third portion P3,which is extended from the second portion P2 to a region below the firstportion P1. The third portion P3 may be formed concurrently with thesecond portion P2, as will be described below, and may be a part of theupper portion of the first semiconductor layer SL1 removed by the recessRS. The third portion P3 may include side portions SP3, which arelocated below the first portion P1 and cover side surfaces of the firstchannel patterns CH1. In an implementation, the third portion P3 may beomitted.

As shown in FIG. 5 , a first thickness t1 (in the second direction D2)of the first portion P1 may be greater than a second thickness t2 (inthe first direction D1) of the second portion P2. In an implementation,the first thickness t1 may be about 1.1 to 3 times the second thicknesst2. In an implementation, the first thickness t1 may be substantiallyequal to the second thickness t2. A third thickness t3 (in the firstdirection D1) of the third portion P3 may be substantially equal to thesecond thickness t2. Each of the first to third thickness t1, t2, and t3and a fourth thickness to be described below may be the largestthickness of a corresponding layer or portion.

The first semiconductor layer SL1 may include a plurality of portions,which are separately and respectively provided on the first channelpatterns CH1 spaced apart from each other in the first direction D1. Inan implementation, the first portions P1, which are on the first channelpatterns CH1 adjacent to each other in the first direction D1, may bespaced apart from each other.

The second semiconductor layer SL2 may be provided on each of the firstportions P1 of the first semiconductor layer SL1. In an implementation,the second semiconductor layer SL2 may include a plurality of portions,which are separately and respectively provided on the first channelpatterns CH1 spaced apart from each other in the first direction D1. Thesecond semiconductor layer SL2 may include side portions SP4, which areon the side portions SP1 of the first portion P1 of the firstsemiconductor layer SL1, and a bottom portion BP2, which is on thebottom portion BP1 of the first portion P1 of the first semiconductorlayer SL1.

As shown in FIGS. 3 and 6 , a fourth thickness t4 (in the seconddirection D2) of the second semiconductor layer SL2 may be greater thanthe first thickness t1 of the first portion P1 of the firstsemiconductor layer SL1. In an implementation, the fourth thickness t4may be about two to seven times the first thickness t1. In animplementation, the first thickness t1 may range from about 1 nm toabout 3 nm, and the fourth thickness t4 may range from about 3 nm toabout 9 nm. The thickness of the first semiconductor layer SL1 may beadjusted by a thermal treatment process, which will be described below.Maintaining the first thickness t1 at about 1 nm or greater may helpprevent an impurity diffusion issue, which will be described below.Maintaining the first thickness t1 at about 5 nm or less may help reducethe possibility of and/or prevent the occurrence of a stacking faultbetween the first semiconductor layer SL1 and the first channel patternsCH1 or between the first semiconductor layer SL1 and the secondsemiconductor layer SL2.

As shown in FIG. 4 , the third semiconductor layer SL3 may be a singlelayer covering the first portions P1 of the first semiconductor layerSL1, which are separated from each other in the first direction D1.Similarly, the second semiconductor layers SL2, which are separated fromeach other in the first direction D1, may be in common contact with thethird semiconductor layer SL3. In an implementation, the first portionsP1, which are separately provided on the first channel patterns CH1separated from each other in the first direction D1, may be connected incommon to the third semiconductor layer SL3 through the secondsemiconductor layers SL2. A fifth thickness t5 (in the second directionD2) of the third semiconductor layer SL3 may be greater than the fourththickness t4 of the second semiconductor layer SL2. In animplementation, the fifth thickness t5 of the third semiconductor layerSL3 may range from 20 nm to 40 nm.

Each of the first channel patterns CH1, the buffer layer BL, and themain layer ML may include a semiconductor element whose lattice constantis greater than a lattice constant of a semiconductor element of thesubstrate 100. In an implementation, in the case where the substrate 100includes silicon (Si), the first channel patterns CH1, the buffer layerBL, and the main layer ML may include silicon germanium (SiGe). Thelattice constant of the germanium (Ge) may be greater than the latticeconstant of the silicon (Si).

A germanium concentration of the second semiconductor layer SL2 may behigher than a germanium concentration of the first channel pattern CH1.A germanium concentration of the third semiconductor layer SL3 may behigher than the germanium concentration of the second semiconductorlayer SL2. In an implementation, the germanium concentration of thethird semiconductor layer SL3 may be higher than a germaniumconcentration of the first semiconductor layer SL1. A germaniumconcentration of the fourth semiconductor layer SL4 may be higher thanthe germanium concentration of the third semiconductor layer SL3. Thegermanium concentration of the first semiconductor layer SL1 may behigher than the germanium concentration of the first channel pattern CH1and the germanium concentration of the second semiconductor layer SL2.The germanium concentration of the first semiconductor layer SL1 may belower than the germanium concentration of the third semiconductor layerSL3. A concentration of germanium (Ge) in the main layer ML may increasein the third direction D3.

The germanium concentration of the first channel pattern CH1 may rangefrom, e.g., about 15 at% to about 30 at%. The germanium concentration ofthe first semiconductor layer SL1 may range from, e.g., about 30 at% toabout 50 at%. The germanium concentration of the second semiconductorlayer SL2 may range from, e.g., about 20 at% to about 30 at%. Thegermanium concentration of the third semiconductor layer SL3 may rangefrom, e.g., about 45 at% to about 60 at%. The germanium concentration ofthe fourth semiconductor layer SL4 may range from, e.g., about 50 at% toabout 70 at%.

Portions of the first channel pattern CH1, which are in contact with thefirst semiconductor layer SL1 (e.g., portions adjacent to or at asurface of the first channel pattern CH1), may have a germaniumconcentration lower than other portions of the first channel patternCH1. Both of the first and second portions P1 and P2 of the firstsemiconductor layer SL1 may have the germanium concentration higher thanthose of the first channel pattern CH1 and the second semiconductorlayer SL2. The first and second portions P1 and P2 of the firstsemiconductor layer SL1 may have substantially the same germaniumconcentration. In an implementation, the first and second portions P1and P2 of the first semiconductor layer SL1 may have different germaniumconcentrations from each other. In an implementation, the germaniumconcentration of the first portion P1 of the first semiconductor layerSL1 may be higher than the germanium concentration of the second portionP2 of the first semiconductor layer SL1.

The buffer layer BL and the main layer ML may include impurities (e.g.,boron), allowing the first source/drain pattern SD1 to have the p-typeconductivity. A concentration (e.g., atomic percent) of impurities inthe main layer ML may be higher than that in the buffer layer BL.

The fifth semiconductor layer SL5 (of the capping layer CL) may includethe same semiconductor element as that in the substrate 100. As anexample, the fifth semiconductor layer SL5 may include singlecrystalline silicon (Si). A concentration of silicon (Si) in the fifthsemiconductor layer SL5 may range from 95 at% to 100 at%. Aconcentration of germanium (Ge) in the fifth semiconductor layer SL5 mayrange from 0 at% to 5 at%. In an implementation, germanium (Ge) in thefourth semiconductor layer SL4 may be diffused into the fifthsemiconductor layer SL5, and in this case, the fifth semiconductor layerSL5 may contain a tiny amount of germanium (Ge) (e.g., lower than 5at%).

Referring further to FIG. 2C, the main layer ML may be on the firstactive patterns AP1. In an implementation, a plurality of main layersML, which are respectively on the first active patterns AP1, may bemerged to form a single main layer MI, on the first active patterns AP1.

The main layer MI, may include a first facet FA1, a second facet FA2, athird facet FA3, and a fourth facet FA4. The first to fourth facetsFA1-FA4 may be surfaces of the third semiconductor layer SL3. The firstto fourth facets FA1-FA4 may be substantially the same crystal plane.The first to fourth facets FA1-FA4 may be the (111) crystal planes.

A corner SE of the main layer ML may be defined by the first facet FA1and the second facet FA2 and/or by the third facet FA3 and the fourthfacet FA4. The corner SE may horizontally protrude in a direction awayfrom the first active pattern AP1. In an implementation, the corner SEmay protrude in a direction parallel to the first direction D1.

The capping layer CL may be on the main layer ML. The capping layer CLmay cover the first to fourth facets FA1-FA4 of the main layer ML. Thecapping layer CL may cover the corner SE of the main layer ML. The firstsource/drain pattern SD1 may have the largest width in the firstdirection D1, at a level of the corner SE of the main layer ML.

The interface pattern SC and the active contact AC may be on the firstsource/drain pattern SD1. In an implementation, the interface pattern SCmay be in contact with not only the top surface of the main layer ML butalso the top surface of the capping layer CL. In an implementation, acontact area between the first source/drain pattern SD1 and theinterface pattern SC may be increased, due to the capping layer CL.

FIG. 8 is an enlarged plan view illustrating the region ‘N’ of FIG. 1 ,according to another embodiment. FIG. 9 is an enlarged plan viewillustrating a first semiconductor layer in the region ‘N’. For concisedescription, a previously described element may be identified by thesame reference number without repeating an overlapping descriptionthereof.

Referring to FIGS. 8 and 9 , the first semiconductor layer SL1 accordingto the present embodiments may include the first portion P1, and may notinclude the second portion P2 and the third portion P3. The firstportion P1 of the first semiconductor layer SL1 may cover the first sidesurfaces SW1 of the first channel patterns CH1. In an implementation,the first semiconductor layer SL1 may not be provided on the second sidesurfaces SW2 of the first channel patterns CH1, and the second sidesurfaces SW2 of each of the first channel patterns CH1 may be in contactwith the gate dielectric pattern GI. In an implementation, the firstsemiconductor layer SL1 may include the second and third portions P2 andP3 but may not include the first portion P1.

In an implementation, the first semiconductor layer SL1 having arelatively high germanium concentration may be between the first channelpatterns CH1 and the second semiconductor layer SL2. It may be possibleto prevent the impurities (e.g., boron) in the first source/drainpattern SD1 from being diffused into the first channel patterns CH1 andthereby to improve an operation property of the semiconductor device.

FIGS. 10, 13, 15, 17, 19, 21, and 23 are plan views illustrating stagesin a method of fabricating a semiconductor device, according to anembodiment. FIGS. 11, 12, 14A, 16A, 18A, 20A, 22A, and 24A are sectionalviews taken along lines A-A′ of FIGS. 10, 13, 15, 17, 19, 21, and 23 ,respectively. FIGS. 14B, 16B, 18B, 20B, 22B, and 24B are sectional viewstaken along lines B-B′ of FIGS. 13, 15, 17, 19, 21, and 23 ,respectively. FIGS. 14C, 16C, and 24C are sectional views taken alonglines C-C′ of FIGS. 13, 15, and 23 , respectively. FIG. 24D is asectional view taken along a line D-D′ of FIG. 23 .

Referring to FIGS. 10 and 11 , the substrate 100 including the first andsecond active regions PR and NR may be provided. A base layer may beprovided on the first active region PR, and here, the base layer may beformed of or include a semiconductor material different from thesubstrate 100. In an implementation, the base layer may be asilicon-germanium layer. In an implementation, the base layer may beformed to fill a recess region, which may be formed by etching the firstactive region PR in the first active region PR of the substrate 100.

The substrate 100 and the base layer may be patterned to form the firstand second active patterns AP1 and AP2. The first active patterns AP1may be formed on the first active region PR, and the second activepatterns AP2 may be formed on the second active region NR. The baselayer may be patterned to form the first channel patterns CH1. The firsttrench TR1 may be formed between the first active patterns AP1 andbetween the second active patterns AP2.

The substrate 100 may be patterned to form the second trench TR2 betweenthe first and second active regions PR and NR. The second trench TR2 maybe formed to be deeper than the first trench TR1.

Referring to FIGS. 10 and 12 , the device isolation layer ST may beformed on the substrate 100 to fill the first and second trenches TR1and TR2. The device isolation layer ST may be formed of or include aninsulating material (e.g., silicon oxide). In an implementation, thedevice isolation layer ST may include a liner insulating layer, which isconformally formed along the first and second trenches TR1 and TR2. Thedevice isolation layer ST may be recessed to expose upper portions ofthe first and second active patterns AP1 and AP2. The upper portions ofthe first and second active patterns AP1 and AP2 may protrude above thedevice isolation layer ST in a vertical direction (e.g., the thirddirection D3).

The formation of the device isolation layer ST may include performing anannealing process at least one time. The annealing process may beperformed at a temperature from about 700° C. to about 900° C. As aresult of the annealing process, the first semiconductor layer SL1(e.g., the second portion P2) may be formed on the surfaces of the firstchannel patterns CH1. The second portion P2 may have a germaniumconcentration from about 30 at% to about 50 at%. The second portion P2may be formed by a germanium migration phenomenon, in which germaniumatoms migrate toward surfaces of the first channel patterns CH1 at hightemperature. The germanium migration phenomenon may be caused by adifference in diffusion speed between germanium and silicon, at hightemperature. The third portion of the first semiconductor layer SL1 mayalso be produced in this step.

In embodiments described with reference to FIGS. 8 and 9 , the formationof the second and third portions P2 and P3 may be omitted. In animplementation, the annealing process may be omitted, or the temperatureor process time of the annealing process may be adjusted such that thesecond and third portions P2 and P3 are not formed. Hereinafter, theembodiments of FIGS. 1 and 2A to 2D will be described.

Referring to FIGS. 13 and 14A to 14C, sacrificial patterns PP may beformed to cross the first and second active patterns AP1 and AP2. Thesacrificial patterns PP may be formed to have a line or bar shapeextending in the first direction D1. In an implementation, the formationof the sacrificial patterns PP may include forming a sacrificial layeron the substrate 100, forming hard mask patterns MA on the sacrificiallayer, and pattering the sacrificial layer using the hard mask patternsMA as an etch mask. The sacrificial layer may include a poly-siliconlayer.

A pair of the gate spacers GS may be formed on both side surfaces ofeach of the sacrificial patterns PP. The gate spacers GS may also beformed on both side surfaces of each of the first and second activepatterns AP1 and AP2. The both side surfaces of each of the first andsecond active patterns AP1 and AP2 may be portions that are not coveredwith the device isolation layer ST and the sacrificial patterns PP andare exposed.

The formation of the gate spacers GS may include conformally forming agate spacer layer on the substrate 100 and anisotropically etching thegate spacer layer. The gate spacer layer may be formed of or includeSiCN, SiCON, or SiN. In an implementation, the gate spacer layer may bea multi-layered structure including at least two of SiCN, SiCON, or SiN.

Referring to FIGS. 15 and 16A to 16C, recesses RS may be formed in theupper portion of each of the first and second active patterns AP1 andAP2. A pair of the recesses RS may be formed at both sides of each ofthe sacrificial patterns PP. The formation of the recesses RS mayinclude etching the upper portions of the first and second activepatterns AP1 and AP2 using the hard mask patterns MA and the gatespacers GS as an etch mask. During the etching process, the gate spacersGS may be removed from both side surfaces of each of the first andsecond active patterns AP1 and AP2. The gate spacers GS may be partiallyleft on the side surfaces of the recesses RS. The exposed portion of thedevice isolation layer ST may be recessed during the etching process.

A first mask layer MP may be formed to selectively cover the secondactive patterns AP2. The first mask layer MP may selectively cover thesecond active region NR and may expose the first active region PR. Thefirst mask layer MP may expose the first active patterns AP1.

Referring to FIGS. 17 and 18A to 18B, the first semiconductor layer SL1(e.g., the first portions P1) may be formed in the recesses RS. Thefirst portions P1 may be doped to contain a low concentration ofimpurities. In an implementation, the first portions P1 may be formed ofor include boron-doped silicon-germanium. The first portions P1 may beformed by a hydrogen (H₂) bake process, which may be performed for apre-cleaning process on the surfaces of the recesses RS. In animplementation, the bake process may be performed at a temperature fromabout 700° C. to about 900° C. The first portions P1 may be formed by agermanium migration phenomenon, in which germanium atoms migrate towardsurfaces of the first channel patterns CH1 at high temperature. In animplementation, the first portions P1 may be formed to a thickness fromabout 1 nm to about 5 nm. A germanium concentration of the firstportions P1 may range from about 30 at% to about 50 at%. The firstportions P1 may be connected to the second portions P2 and the thirdportions P3. In an implementation, the bake process may be omitted, andthe first portions P1 may not be provided.

Referring to FIGS. 19 and 20A to 20B, the second semiconductor layersSL2 may be formed in the recesses RS to cover the first portions P1 (ofthe first semiconductor layers SL1). The second semiconductor layers SL2may be doped to have a low concentration of impurities. In animplementation, the second semiconductor layers SL2 may be formed of orinclude boron-doped silicon-germanium.

The formation of the second semiconductor layers SL2 may includeperforming a first SEG process using the first portions P1 as a seedlayer. In an implementation, the first SEG process may include achemical vapor deposition (CVD) process or a molecular beam epitaxy(MBE) process. In an implementation, the second semiconductor layers SL2may have a convex sectional shape, as shown in FIG. 20B. The secondsemiconductor layers SL2 may be formed to have a substantially conformalprofile. The germanium concentration of the second semiconductor layerSL2 may range from about 20 at% to about 30 at%. The secondsemiconductor layer SL2 may be formed to a thickness from about 3 nm toabout 9 nm.

Referring to FIGS. 21, 22A, and 22B, the main layer ML and the cappinglayer CL may be formed on the second semiconductor layer SL2. The mainlayer ML may be doped to have an impurity concentration higher than theimpurity concentration of the buffer layer BL. In an implementation, themain layer ML may be formed of or include a silicon-germanium (SiGe)layer, which is doped with boron (B). In an implementation, the thirdsemiconductor layer SL3, the fourth semiconductor layer SL4, and thefifth semiconductor layer SL5 may be sequentially formed on the secondsemiconductor layer SL2.

The main layer ML may be formed by a second SEG process, in which thebuffer layer BL is used as a seed layer. The capping layer CL may beformed by a third SEG process, in which the main layer ML is used as aseed layer. In an implementation, the capping layer CL may includesingle-crystalline silicon (Si). A concentration of silicon (Si) in thecapping layer CL may range from 95 at% to 100 at%. In an implementation,the third SEG process may be performed at a lower temperature than thatfor the first and second SEG processes. The germanium concentration ofthe third semiconductor layer SL3 may range from about 45 at% to about60 at%. The germanium concentration of the fourth semiconductor layerSL4 may range from about 50 at% to about 70 at%.

Referring to FIGS. 23 and 24A to 24D, the first mask layer MP may beremoved. A second mask layer may be formed to selectively cover thefirst active patterns AP1. The second mask layer may selectively coverthe first active region PR and may expose the second active region NR.The second mask layer may expose the second active patterns AP2.

The second source/drain patterns SD2 may be formed to fill the recessesRS of the second active patterns AP2 exposed by the second mask layer.For example, the formation of the second source/drain patterns SD2 mayinclude performing an SEG process using exposed inner side surfaces ofthe recesses RS as a seed layer. The second source/drain patterns SD2may contain the same semiconductor element (e.g., silicon (Si)) as thatin the substrate 100. Thereafter, the second mask layer may be removed.

The first interlayered insulating layer 110 may be formed to cover thefirst and second source/drain patterns SD1 and SD2, the gate spacers GS,and the hard mask patterns MA. The first interlayered insulating layer110 may be formed of or include silicon oxide.

A planarization process may be performed on the first interlayeredinsulating layer 110 to expose the top surfaces of the sacrificialpatterns PP. The planarization of the first interlayered insulatinglayer 110 may be performed using an etch-back process or a chemicalmechanical polishing (CMP) process. Thus, the first interlayeredinsulating layer 110 may have a top surface that is coplanar with thetop surfaces of the sacrificial patterns PP and the top surfaces of thegate spacers GS.

Each of the sacrificial patterns PP may be replaced with the gateelectrode GE and the gate dielectric pattern GI. In an implementation,the sacrificial patterns PP exposed may be selectively removed to forman empty space. The gate dielectric pattern GI may be formed in theempty space, which is formed by removing the sacrificial pattern PP. Thegate electrode GE may be formed on the gate dielectric pattern GI tofill the empty space.

The gate dielectric pattern GI may be conformally formed by an atomiclayer deposition (ALD) and/or a chemical oxidation process. In animplementation, the gate dielectric pattern GI may be formed of orinclude a high-k dielectric material. In an implementation, the gatedielectric pattern GI may be formed of or include a ferroelectricmaterial.

The formation of the gate electrode GE may include forming a gateelectrode layer on the gate dielectric pattern GI and planarizing thegate electrode layer. In an implementation, the gate electrode layer mayinclude a first gate electrode layer including metal nitride and asecond gate electrode layer including low resistance metal.

An upper portion of the gate electrode GE may be selectively etched torecess the gate electrode GE. The recessed top surface of the gateelectrode GE may be lower than the top surface of the first interlayeredinsulating layer 110 and the top surfaces of the gate spacers GS. Thegate capping pattern GP may be formed on the recessed gate electrode GE.The formation of the gate capping pattern GP may include forming a gatecapping layer to cover the recessed gate electrode GE and planarizingthe gate capping layer to expose the top surface of the firstinterlayered insulating layer 110. In an implementation, the gatecapping layer may be formed of or include SiON, SiCN, SiCON, or SiN.

Referring back to FIGS. 1 and 2A to 2D, the second interlayeredinsulating layer 120 may be formed on the first interlayered insulatinglayer 110. The active contacts AC may be formed to penetrate the secondinterlayered insulating layer 120 and the first interlayered insulatinglayer 110 and to be electrically connected to the first and secondsource/drain patterns SD1 and SD2. The gate contact GC may be formed topenetrate the second interlayered insulating layer 120 and the gatecapping pattern GP and to be electrically connected to the gateelectrode GE. The formation of the active contacts AC and the gatecontact GC may include forming the barrier pattern BM to fill a contacthole and forming the conductive pattern FM on the barrier pattern BM.

The interface pattern SC may be formed between the active contact AC andthe first source/drain pattern SD1 and between the active contact AC andthe second source/drain pattern SD2. The formation of the interfacepattern SC may include performing a silicidation process on the firstand second source/drain patterns SD1 and SD2. In an implementation, theinterface pattern SC may be formed of or include titanium silicide,tantalum silicide, tungsten silicide, nickel silicide, or cobaltsilicide.

The third interlayered insulating layer 130 may be formed on the secondinterlayered insulating layer 120. The first interconnection layer maybe formed in the third interlayered insulating layer 130. The formationof the first interconnection layer may include forming theinterconnection lines IL and forming the vias VI under theinterconnection lines IL. The interconnection lines IL and the vias VImay be formed by a damascene process or a dual damascene process.

FIGS. 25A to 25D are sectional views, which are taken along lines A-A′,B-B′, C-C′, and D-D′ of FIG. 1 to illustrate a semiconductor deviceaccording to an embodiment. In the following description, an elementpreviously described with reference to FIGS. 1, 2A to 2D, and 3 may beidentified by the same reference number without repeating an overlappingdescription thereof, for the sake of brevity.

Referring to FIGS. 1 and 25A to 25D, the substrate 100 including thefirst and second active regions PR and NR may be provided. The deviceisolation layer ST may be on the substrate 100. The device isolationlayer ST may define the first active patterns AP1 and the second activepatterns AP2 in an upper portion of the substrate 100. The first andsecond active patterns AP1 and AP2 may be defined on the first andsecond active regions PR and NR, respectively.

Each of the first active patterns AP1 may include the first channelpatterns CH1 which are vertically stacked on the substrate 100. Thestack of the first channel patterns CH1 may be spaced apart from eachother in the third direction D3. The first channel patterns CH1 may beoverlapped with each other, when viewed in a plan view.

Each of the second active patterns AP2 may include the second channelpatterns CH2 which are vertically stacked on the substrate 100. Thestack of the second channel patterns CH2 may be spaced apart from eachother in the third direction D3. The second channel patterns CH2 may beoverlapped with each other, when viewed in a plan view. The firstchannel patterns CH1 may be formed of or include a semiconductormaterial different from the substrate 100. For example, in the casewhere the substrate 100 is a silicon substrate, the first channelpatterns CH1 may be formed of or include silicon-germanium. The secondchannel patterns CH2 may be formed of or include the same material(e.g., silicon (Si)) as the substrate 100.

The first source/drain patterns SD1 may penetrate at least a portion ofthe first channel patterns CH1. The recesses RS may penetrate at least aportion of the first channel patterns CH1, and the first source/drainpatterns SD1 may fill the recesses RS, respectively. The stack of thefirst channel patterns CH1 may connect an adjacent pair of the firstsource/drain patterns SD1 to each other. The first source/drain patternsSD1 according to the present embodiment may be configured to havesubstantially the same features as those in the previous embodiments.

The second source/drain patterns SD2 may penetrate at least a portion ofthe second channel patterns CH2. The stack of the second channelpatterns CH2 may connect an adjacent pair of the second source/drainpatterns SD2 to each other. The second source/drain patterns SD2according to the present embodiment may be configured to havesubstantially the same features as those in the previous embodiments.

The gate electrodes GE may cross the first and second channel patternsCH1 and CH2 and may extend in the first direction D1. The gate electrodeGE may be overlapped with the first and second channel patterns CH1 andCH2, when viewed in a plan view. A pair of the gate spacers GS may be onboth side surfaces of the gate electrode GE. The gate capping pattern GPmay be provided on the gate electrode GE.

The gate electrode GE may surround each of the first and second channelpatterns CH1 and CH2 (e.g., see FIG. 25D). The gate electrode GE may beon the first top surface TS1, at least one side surface, and a firstbottom surface BS1 of the first channel pattern CH1. The gate electrodeGE may be on the second top surface TS2, at least one side surface, anda second bottom surface BS2 of the second channel pattern CH2. In animplementation, the gate electrode GE may surround the top, bottom, andopposite side surfaces of each of the first and second channel patternsCH1 and CH2. A transistor according to the present embodiment may be athree-dimensional field-effect transistor (e.g., multi-bridge channelfield-effect transistor (MBCFET)), in which the gate electrode GE isprovided to three-dimensionally surround the channel patterns CH1 andCH2.

The gate dielectric pattern GI may be between each of the first andsecond channel patterns CH1 and CH2 and the gate electrode GE. The gatedielectric pattern GI may surround each of the first and second channelpatterns CH1 and CH2.

The first source/drain patterns SD1 may include the first semiconductorlayer SL1, and the first portion P1 of the first semiconductor layer SL1may cover the first side surfaces SW1 (e.g., see FIGS. 25A and 25C). Thefirst portion P1 may be have substantially the same shape as that in theprevious embodiments. The first semiconductor layer SL1 may be betweenthe gate dielectric pattern GI and the first channel patterns CH1. In animplementation, the second portion P2 of the first semiconductor layerSL1 may be between the gate dielectric pattern GI and the first channelpatterns CH1. The second portion P2 of the first semiconductor layer SL1may cover the second side surfaces SW2 of the first channel patternsCH1, as shown in FIG. 25D. Unlike the previous embodiments, the secondportion P2 may not be provided on the first top surfaces TS1 of thefirst channel patterns CH1. In an implementation, referring back to FIG.7 , the second portion P2 according to the present embodiment mayinclude two opposite side portions SP2 and may not have the top portionTP. The third portion P3 may have the same structure as that in theprevious embodiments. In an implementation, the second and thirdportions P2 and P3 may be omitted, as in the embodiments described withreference to FIGS. 8 and 9 .

On the second active region NR, an insulating pattern IP may be betweenthe gate dielectric pattern GI and the second source/drain pattern SD2.The gate electrode GE may be spaced apart from the second source/drainpattern SD2 by the gate dielectric pattern GI and the insulating patternIP. In an implementation, the insulating pattern IP may be omitted onthe first active region PR.

The first interlayered insulating layer 110 and the second interlayeredinsulating layer 120 may be on the substrate 100. The active contacts ACmay penetrate the first and second interlayered insulating layers 110and 120 and may be connected to the first and second source/drainpatterns SD1 and SD2, respectively. The gate contact GC may penetratethe second interlayered insulating layer 120 and the gate cappingpattern GP and to be connected to the gate electrode GE.

The third interlayered insulating layer 130 may be on the secondinterlayered insulating layer 120. The first interconnection layerincluding the interconnection lines IL and the vias VI may be in thethird interlayered insulating layer 130.

By way of summation and review, it may be desirable for semiconductordevices to have high reliability, high performance, and/or multiplefunctions. Increases complexity and/or integration density ofsemiconductor devices may be considered.

One or more embodiments may provide a semiconductor device including afield effect transistor.

One or more embodiments may provide a semiconductor device with improvedelectric characteristics.

According to an embodiment, it may be possible to help preventimpurities in a source/drain pattern from being diffused into a channelpattern and thereby to improve an operation property of a semiconductordevice.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

What is claimed is:
 1. A semiconductor device, comprising: a substrate;a first active pattern on the substrate and extending in a firstdirection, the first active pattern including at least one first channelpattern; first source/drain patterns in recesses in an upper portion ofthe at least one first channel pattern; and a gate electrode on thefirst active pattern and extending in a second direction crossing thefirst direction, wherein: each of the first source/drain patternsincludes a first semiconductor layer and a second semiconductor layer,which are sequentially provided in the recesses, each of the at leastone first channel pattern, the first semiconductor layer, and the secondsemiconductor layer includes silicon-germanium (SiGe), the firstsemiconductor layer has a germanium concentration higher than agermanium concentration of the second semiconductor layer, the at leastone first channel pattern includes a plurality of first layersvertically stacked on the substrate, the plurality of first layers areconnected to the first semiconductor layer.
 2. The device as claimed inclaim 1, wherein: the at least one first channel pattern includes a pairof first surfaces facing the first source/drain patterns, and the firstsemiconductor layer includes first portions on the first surfaces. 3.The device as claimed in claim 2, wherein: each of the firstsource/drain patterns further includes a third semiconductor layer onthe second semiconductor layer, the at least one first channel patternincludes a plurality of first channel patterns spaced apart from eachother in the second direction, the first portions of the firstsemiconductor layer are separately and respectively provided on theplurality of first channel patterns, and the third semiconductor layeris a single layer covering the first portions of the first semiconductorlayer separated from each other in the second direction.
 4. The deviceas claimed in claim 3, wherein the second semiconductor layer includes aplurality of portions respectively on the first portions of the firstsemiconductor layer and spaced apart from each other.
 5. The device asclaimed in claim 2, wherein: the at least one first channel patternfurther includes a pair of second surfaces, which connect the pair offirst surfaces to each other and are overlapped with the gate electrode,and the first semiconductor layer includes second portions on the secondsurfaces.
 6. The device as claimed in claim 5, wherein the secondportions of the first semiconductor layer extend to a region below thefirst portions of the first semiconductor layer and are in contact withbottom surfaces of the first portions of the first semiconductor layer.7. The device as claimed in claim 5, wherein the first portions of thefirst semiconductor layer have a different thickness from the secondportions of the first semiconductor layer.
 8. The device as claimed inclaim 5, wherein the second portions of the first semiconductor layercover a top surface of the at least one first channel pattern.
 9. Thedevice as claimed in claim 1, wherein: each of the first source/drainpatterns further includes a third semiconductor layer on the secondsemiconductor layer, the first semiconductor layer is thinner than thesecond semiconductor layer, and the second semiconductor layer isthinner than the third semiconductor layer.
 10. The device as claimed inclaim 9, wherein a thickness of the second semiconductor layer is abouttwo to seven times a thickness of the first semiconductor layer.
 11. Thedevice as claimed in claim 9, wherein: a thickness of the firstsemiconductor layer ranges from about 1 nm to about 5 nm, and athickness of the second semiconductor layer ranges from about 10 nm toabout 30 nm.
 12. The device as claimed in claim 1, wherein: each of thefirst source/drain patterns further includes a third semiconductor layeron the second semiconductor layer, and a fourth semiconductor layer onthe third semiconductor layer, and the fourth semiconductor layer has agermanium concentration higher than that of the third semiconductorlayer.
 13. The device as claimed in claim 1, wherein: the first activepattern is on a first active region of the substrate, the semiconductordevice further includes: a second active pattern on a second activeregion of the substrate and extending in the first direction; and secondsource/drain patterns in recesses in an upper portion of the secondactive pattern, the first active region is a PMOSFET region, and thesecond active region is an NMOSFET region.
 14. The device as claimed inclaim 1, wherein: the at least one first channel pattern includes aplurality of first channel patterns, the plurality of first channelpatterns being sequentially stacked on the substrate, and the gateelectrode surrounds a top surface, a bottom surface, and both sidesurfaces of each of the plurality of first channel patterns.
 15. Asemiconductor device, comprising: a substrate; a first active pattern onthe substrate and extending in a first direction; first source/drainpatterns in recesses in an upper portion of the first active pattern;and a gate electrode on the first active pattern and extending in asecond direction crossing the first direction, wherein: each of thefirst source/drain patterns includes a first semiconductor layer and asecond semiconductor layer, which are sequentially provided in therecesses, the first active pattern includes a first channel pattern atan upper portion thereof, the first channel pattern includes a pair offirst surfaces that face the first source/drain patterns, and a pair ofsecond surfaces that connect the pair of first surfaces to each otherand are overlapped with the gate electrode, the first semiconductorlayer includes first portions on the first surfaces and second portionson the second surfaces, and the first portions of the firstsemiconductor layer is thicker than the second portions of the firstsemiconductor layer, the first channel pattern includes a plurality offirst layers vertically stacked on the substrate, the plurality of firstlayers are connected to the first semiconductor layer.
 16. The device asclaimed in claim 15, wherein: the first channel pattern includessilicon-germanium (SiGe), and a germanium concentration of the firstsemiconductor layer is higher than that of the first channel pattern.17. The device as claimed in claim 15, wherein: each of the source/drainpatterns further includes a third semiconductor layer on the secondsemiconductor layer, the first semiconductor layer is thinner than thesecond semiconductor layer, and the second semiconductor layer isthinner than the third semiconductor layer.
 18. The device as claimed inclaim 17, wherein: each of the first source/drain patterns furtherincludes a fourth semiconductor layer on the third semiconductor layer,and a germanium concentration of the fourth semiconductor layer ishigher than that of the third semiconductor layer.
 19. The device asclaimed in claim 15, wherein: the first active pattern is on a firstactive region of the substrate, the semiconductor device furtherincludes: a second active pattern on a second active region of thesubstrate to extend in the first direction; and second source/drainpatterns in recesses in an upper portion of the second active pattern,the first active region is a PMOSFET region, and the second activeregion is an NMOSFET region.
 20. A semiconductor device, comprising: asubstrate; a first active pattern on the substrate and extending in afirst direction, the first active pattern including a first channelpattern; first source/drain patterns in recesses in an upper portion ofthe first channel pattern; a gate electrode on the first active patternand extending in a second direction crossing the first direction, anactive contact connected to the first source/drain pattern; and aninterface layer between the active contact and the first source/drainpattern, wherein: each of the first source/drain patterns includes afirst semiconductor layer, and a second semiconductor layer, which aresequentially provided on the recesses, each of the first channelpattern, the first semiconductor layer, and the second semiconductorlayer includes silicon-germanium (SiGe), a germanium concentration ofthe first semiconductor layer is higher than a germanium concentrationof the second semiconductor layer, the first channel pattern includes apair of first surfaces, which face the first source/drain patterns, anda pair of second surfaces, which connect the pair of first surfaces toeach other and are overlapped with the gate electrode, and the firstsemiconductor layer includes first portions on the first surfaces andsecond portions on the second surfaces, the first channel patternincludes a plurality of first layers vertically stacked on thesubstrate, the plurality of first layers are connected to the firstsemiconductor layer.